Schottky-barrier resistive memory with highly uniform switching

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-μW power and highly uniform current distributions (on-off ratio >1000×) are realized. The Schottky barrier at Ni/GeOx interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-μW operating power.

Original languageEnglish
Pages (from-to)5166-5170
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number7
DOIs
Publication statusPublished - 2014

Keywords

  • Hopping Conduction
  • Resistive Random Access Memory (RRAM)
  • Schottky Barrier

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Schottky-barrier resistive memory with highly uniform switching'. Together they form a unique fingerprint.

  • Cite this