TY - JOUR
T1 - Sapphire surface patterning using femtosecond laser micromachining
AU - Chang, Cho Wei
AU - Chen, Chien Yu
AU - Chang, Tien Li
AU - Ting, Chia Jen
AU - Wang, Chien Ping
AU - Chou, Chang Pin
N1 - Funding Information:
This work was funded by the National Science Council (NSC) of Taiwan, Republic of China under grant NSC 100-2218-E-003-001-MY2. We deeply appreciate Dr. Hung-Yi Lin, Dr. Min-Chieh Chou, Dr. Han-Ping Yang and Mr. Wen-Lang Lai from the Mechanical and Systems Research Laboratories at the Industrial Technology Research Institute for their advice and discussion on laser studies.
PY - 2012/11
Y1 - 2012/11
N2 - This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm2 and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.
AB - This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm2 and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.
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U2 - 10.1007/s00339-012-7048-6
DO - 10.1007/s00339-012-7048-6
M3 - Article
AN - SCOPUS:84870244612
SN - 0947-8396
VL - 109
SP - 441
EP - 448
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 2
ER -