Sapphire surface patterning using femtosecond laser micromachining

Cho Wei Chang; Chien Yu Chen; Tien Li Chang; Chia Jen Ting; Chien Ping Wang; Chang Pin Chou

doi:10.1007/s00339-012-7048-6

Sapphire surface patterning using femtosecond laser micromachining

Cho Wei Chang, Chien Yu Chen, Tien Li Chang^*, Chia Jen Ting, Chien Ping Wang, Chang Pin Chou

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10^-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm² and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.

Original language	English
Pages (from-to)	441-448
Number of pages	8
Journal	Applied Physics A: Materials Science and Processing
Volume	109
Issue number	2
DOIs	https://doi.org/10.1007/s00339-012-7048-6
Publication status	Published - 2012 Nov

ASJC Scopus subject areas

General Chemistry
General Materials Science

Access to Document

10.1007/s00339-012-7048-6

Cite this

@article{bb8a3a2c0d654f64bca7d268313d18cf,

title = "Sapphire surface patterning using femtosecond laser micromachining",

abstract = "This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm2 and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.",

author = "Chang, {Cho Wei} and Chen, {Chien Yu} and Chang, {Tien Li} and Ting, {Chia Jen} and Wang, {Chien Ping} and Chou, {Chang Pin}",

note = "Funding Information: This work was funded by the National Science Council (NSC) of Taiwan, Republic of China under grant NSC 100-2218-E-003-001-MY2. We deeply appreciate Dr. Hung-Yi Lin, Dr. Min-Chieh Chou, Dr. Han-Ping Yang and Mr. Wen-Lang Lai from the Mechanical and Systems Research Laboratories at the Industrial Technology Research Institute for their advice and discussion on laser studies.",

year = "2012",

month = nov,

doi = "10.1007/s00339-012-7048-6",

language = "English",

volume = "109",

pages = "441--448",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "2",

}

TY - JOUR

T1 - Sapphire surface patterning using femtosecond laser micromachining

AU - Chang, Cho Wei

AU - Chen, Chien Yu

AU - Chang, Tien Li

AU - Ting, Chia Jen

AU - Wang, Chien Ping

AU - Chou, Chang Pin

N1 - Funding Information: This work was funded by the National Science Council (NSC) of Taiwan, Republic of China under grant NSC 100-2218-E-003-001-MY2. We deeply appreciate Dr. Hung-Yi Lin, Dr. Min-Chieh Chou, Dr. Han-Ping Yang and Mr. Wen-Lang Lai from the Mechanical and Systems Research Laboratories at the Industrial Technology Research Institute for their advice and discussion on laser studies.

PY - 2012/11

Y1 - 2012/11

N2 - This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm2 and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.

AB - This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10-15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5 × 5 mm2 and a depth of 1.2 ± 0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under wellcontrolled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.

UR - http://www.scopus.com/inward/record.url?scp=84870244612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870244612&partnerID=8YFLogxK

U2 - 10.1007/s00339-012-7048-6

DO - 10.1007/s00339-012-7048-6

M3 - Article

AN - SCOPUS:84870244612

SN - 0947-8396

VL - 109

SP - 441

EP - 448

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Sapphire surface patterning using femtosecond laser micromachining

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this