RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications

C. W. Liu*, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 15

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications'. Together they form a unique fingerprint.

Cite this