RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications

C. W. Liu, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume525
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 15

Fingerprint

Laser ablation
Temperature measurement
laser ablation
temperature measurement
wafers
gratings
Etching
High power lasers
Lithography
Laser beams
Thermal expansion
Light sources
Wavelength
etching
Lasers
interference
high power lasers
thermal expansion
light sources
lithography

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications. / Liu, C. W.; Lee, M. H.; Chao, C. Y.; Chen, C. Y.; Yang, C. C.; Chang, Y.

In: Materials Research Society Symposium - Proceedings, Vol. 525, 01.01.1998, p. 121-126.

Research output: Contribution to journalConference article

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AU - Liu, C. W.

AU - Lee, M. H.

AU - Chao, C. Y.

AU - Chen, C. Y.

AU - Yang, C. C.

AU - Chang, Y.

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AB - Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

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