RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications

C. W. Liu, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

    Research output: Contribution to journalConference article

    1 Citation (Scopus)

    Abstract

    Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

    Original languageEnglish
    Pages (from-to)121-126
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Volume525
    Publication statusPublished - 1998 Jan 1
    EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
    Duration: 1998 Apr 131998 Apr 15

    Fingerprint

    Laser ablation
    Temperature measurement
    laser ablation
    temperature measurement
    wafers
    gratings
    Etching
    High power lasers
    Lithography
    Laser beams
    Thermal expansion
    Light sources
    Wavelength
    etching
    Lasers
    interference
    high power lasers
    thermal expansion
    light sources
    lithography

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications. / Liu, C. W.; Lee, M. H.; Chao, C. Y.; Chen, C. Y.; Yang, C. C.; Chang, Y.

    In: Materials Research Society Symposium - Proceedings, Vol. 525, 01.01.1998, p. 121-126.

    Research output: Contribution to journalConference article

    @article{9853026492cc4f8fa7a6c7658a6f02aa,
    title = "RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications",
    abstract = "Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.",
    author = "Liu, {C. W.} and Lee, {M. H.} and Chao, {C. Y.} and Chen, {C. Y.} and Yang, {C. C.} and Y. Chang",
    year = "1998",
    month = "1",
    day = "1",
    language = "English",
    volume = "525",
    pages = "121--126",
    journal = "Materials Research Society Symposium - Proceedings",
    issn = "0272-9172",
    publisher = "Materials Research Society",

    }

    TY - JOUR

    T1 - RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications

    AU - Liu, C. W.

    AU - Lee, M. H.

    AU - Chao, C. Y.

    AU - Chen, C. Y.

    AU - Yang, C. C.

    AU - Chang, Y.

    PY - 1998/1/1

    Y1 - 1998/1/1

    N2 - Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

    AB - Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process, the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

    UR - http://www.scopus.com/inward/record.url?scp=0031622355&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0031622355&partnerID=8YFLogxK

    M3 - Conference article

    VL - 525

    SP - 121

    EP - 126

    JO - Materials Research Society Symposium - Proceedings

    JF - Materials Research Society Symposium - Proceedings

    SN - 0272-9172

    ER -