Roughness-enhanced reliability of MOS tunneling diodes

C. H. Lin; F. Yuan; C. R. Shie; K. F. Chen; B. C. Hsu; M. H. Lee; W. W. Pai; C. W. Liu

doi:10.1109/LED.2002.1015232

Roughness-enhanced reliability of MOS tunneling diodes

C. H. Lin^*, F. Yuan, C. R. Shie, K. F. Chen, B. C. Hsu, M. H. Lee, W. W. Pai, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T _BD shows 2.5-fold enhancement at 63% failure rate, while both the D ₂ and H ₂-treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T _BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO ₂ interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO ₂ interface by the impact of the energetic electrons and holes.

Original language	English
Pages (from-to)	431-433
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	7
DOIs	https://doi.org/10.1109/LED.2002.1015232
Publication status	Published - 2002 Jul
Externally published	Yes

Keywords

Electroluminescence
MOS
Reliability
Roughness
Ultrathin oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2002.1015232

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title = "Roughness-enhanced reliability of MOS tunneling diodes",

abstract = "Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2-treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.",

keywords = "Electroluminescence, MOS, Reliability, Roughness, Ultrathin oxide",

author = "Lin, {C. H.} and F. Yuan and Shie, {C. R.} and Chen, {K. F.} and Hsu, {B. C.} and Lee, {M. H.} and Pai, {W. W.} and Liu, {C. W.}",

note = "Funding Information: Manuscript received February 20, 2002; revised April 29, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., (Contracts 90-2212-E-002-226 and 90-2215-E-002-034), and the Institute of Applied Science and Engineering Research, Academia Sinica, Taipei, Taiwan. The review of this letter was arranged by Editor C.-P. Chang.",

year = "2002",

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doi = "10.1109/LED.2002.1015232",

language = "English",

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pages = "431--433",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Roughness-enhanced reliability of MOS tunneling diodes

AU - Lin, C. H.

AU - Yuan, F.

AU - Shie, C. R.

AU - Chen, K. F.

AU - Hsu, B. C.

AU - Lee, M. H.

AU - Pai, W. W.

AU - Liu, C. W.

N1 - Funding Information: Manuscript received February 20, 2002; revised April 29, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., (Contracts 90-2212-E-002-226 and 90-2215-E-002-034), and the Institute of Applied Science and Engineering Research, Academia Sinica, Taipei, Taiwan. The review of this letter was arranged by Editor C.-P. Chang.

PY - 2002/7

Y1 - 2002/7

N2 - Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2-treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

AB - Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2-treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

KW - Electroluminescence

KW - MOS

KW - Reliability

KW - Roughness

KW - Ultrathin oxide

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Roughness-enhanced reliability of MOS tunneling diodes

Abstract

Keywords

ASJC Scopus subject areas

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