Roughness-enhanced reliability of MOS tunneling diodes

C. H. Lin, F. Yuan, C. R. Shie, K. F. Chen, B. C. Hsu, Min-Hung Lee, W. W. Pai, C. W. Liu

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2 -treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

    Original languageEnglish
    Pages (from-to)431-433
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume23
    Issue number7
    DOIs
    Publication statusPublished - 2002 Jul 1

    Fingerprint

    Diodes
    Surface roughness
    Oxides
    Vacuum technology
    Light emission
    Momentum
    Scattering
    Defects
    Electrons

    Keywords

    • Electroluminescence
    • MOS
    • Reliability
    • Roughness
    • Ultrathin oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Lin, C. H., Yuan, F., Shie, C. R., Chen, K. F., Hsu, B. C., Lee, M-H., ... Liu, C. W. (2002). Roughness-enhanced reliability of MOS tunneling diodes. IEEE Electron Device Letters, 23(7), 431-433. https://doi.org/10.1109/LED.2002.1015232

    Roughness-enhanced reliability of MOS tunneling diodes. / Lin, C. H.; Yuan, F.; Shie, C. R.; Chen, K. F.; Hsu, B. C.; Lee, Min-Hung; Pai, W. W.; Liu, C. W.

    In: IEEE Electron Device Letters, Vol. 23, No. 7, 01.07.2002, p. 431-433.

    Research output: Contribution to journalArticle

    Lin, CH, Yuan, F, Shie, CR, Chen, KF, Hsu, BC, Lee, M-H, Pai, WW & Liu, CW 2002, 'Roughness-enhanced reliability of MOS tunneling diodes', IEEE Electron Device Letters, vol. 23, no. 7, pp. 431-433. https://doi.org/10.1109/LED.2002.1015232
    Lin, C. H. ; Yuan, F. ; Shie, C. R. ; Chen, K. F. ; Hsu, B. C. ; Lee, Min-Hung ; Pai, W. W. ; Liu, C. W. / Roughness-enhanced reliability of MOS tunneling diodes. In: IEEE Electron Device Letters. 2002 ; Vol. 23, No. 7. pp. 431-433.
    @article{4f0573aab22841ae8e8f616bfebf387d,
    title = "Roughness-enhanced reliability of MOS tunneling diodes",
    abstract = "Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63{\%} failure rate, while both the D 2 and H 2 -treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63{\%} failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.",
    keywords = "Electroluminescence, MOS, Reliability, Roughness, Ultrathin oxide",
    author = "Lin, {C. H.} and F. Yuan and Shie, {C. R.} and Chen, {K. F.} and Hsu, {B. C.} and Min-Hung Lee and Pai, {W. W.} and Liu, {C. W.}",
    year = "2002",
    month = "7",
    day = "1",
    doi = "10.1109/LED.2002.1015232",
    language = "English",
    volume = "23",
    pages = "431--433",
    journal = "IEEE Electron Device Letters",
    issn = "0741-3106",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "7",

    }

    TY - JOUR

    T1 - Roughness-enhanced reliability of MOS tunneling diodes

    AU - Lin, C. H.

    AU - Yuan, F.

    AU - Shie, C. R.

    AU - Chen, K. F.

    AU - Hsu, B. C.

    AU - Lee, Min-Hung

    AU - Pai, W. W.

    AU - Liu, C. W.

    PY - 2002/7/1

    Y1 - 2002/7/1

    N2 - Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2 -treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

    AB - Both electrical and optical reliabilities of PMOS and NMOS tunneling diodes are enhanced by oxide roughness, prepared by very high vacuum prebake technology. For the rough PMOS devices, as compared to the flat PMOS devices, the Weibull plot of T BD shows 2.5-fold enhancement at 63% failure rate, while both the D 2 and H 2 -treated flat PMOS devices show similar inferior reliability. For the rough NMOS devices, as compared to the flat NMOS devices, the Weibull plot of T BD shows 4.9-fold enhancement at 63% failure rate. The time evolutions of the light emission from the rough PMOS and NMOS diodes degrade much less than those of the flat PMOS and NMOS diodes. The momentum reduction perpendicular to the Si/SiO 2 interface by roughness scattering could possibly make it difficult to form defects in the bulk oxide and at the Si/SiO 2 interface by the impact of the energetic electrons and holes.

    KW - Electroluminescence

    KW - MOS

    KW - Reliability

    KW - Roughness

    KW - Ultrathin oxide

    UR - http://www.scopus.com/inward/record.url?scp=0036646703&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0036646703&partnerID=8YFLogxK

    U2 - 10.1109/LED.2002.1015232

    DO - 10.1109/LED.2002.1015232

    M3 - Article

    VL - 23

    SP - 431

    EP - 433

    JO - IEEE Electron Device Letters

    JF - IEEE Electron Device Letters

    SN - 0741-3106

    IS - 7

    ER -