Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu; M. H. Lee; Miin Jang Chen; Ching Fuh Lin; M. Y. Chern

doi:10.1109/55.887479

Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu^*
, M. H. Lee
, Miin Jang Chen
, Ching Fuh Lin
, M. Y. Chern

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10^-6 was obtained using Al electrodes.

Original language	English
Pages (from-to)	601-603
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/55.887479
Publication status	Published - 2000 Dec
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes",

abstract = "An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.",

author = "Liu, \{C. W.\} and Lee, \{M. H.\} and Chen, \{Miin Jang\} and Lin, \{Ching Fuh\} and Chern, \{M. Y.\}",

note = "Funding Information: Manuscript received July 31, 2000. This work was supported by National Science Council, Taiwan, R.O.C., under Contracts 89-2218-E-002-017 and 89-2112-M-002-034, and by the Tjing Ling Foundation.The review of this letter was arranged by Editor E. Sangiorgi.",

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doi = "10.1109/55.887479",

language = "English",

volume = "21",

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journal = "IEEE Electron Device Letters",

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AU - Liu, C. W.

AU - Lee, M. H.

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

AU - Chern, M. Y.

N1 - Funding Information: Manuscript received July 31, 2000. This work was supported by National Science Council, Taiwan, R.O.C., under Contracts 89-2218-E-002-017 and 89-2112-M-002-034, and by the Tjing Ling Foundation.The review of this letter was arranged by Editor E. Sangiorgi.

PY - 2000/12

Y1 - 2000/12

N2 - An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

AB - An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

Abstract

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