Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

C. W. Liu*, M. H. Lee, Miin Jang Chen, Ching Fuh Lin, M. Y. Chern

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.

Original languageEnglish
Pages (from-to)601-603
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
Publication statusPublished - 2000 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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