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Room temperature two-terminal characteristics in silicon nanowires
S. F. Hu
*
, W. Z. Wong
, S. S. Liu
, Y. C. Wu
, C. L. Sung
, T. Y. Huang
*
Corresponding author for this work
Research output
:
Contribution to journal
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Article
›
peer-review
18
Citations (Scopus)
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INIS
temperature range 0273-0400 k
100%
nanowires
100%
silicon
100%
transport
25%
width
25%
voltage
25%
oxidation
25%
thickness
25%
wires
25%
carriers
25%
electron beams
25%
one-dimensional calculations
25%
confinement
25%
Material Science
Nanowire
100%
Silicon
100%
Lithography
25%
Current Voltage Characteristics
25%