Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu; W. Z. Wong; S. S. Liu; Y. C. Wu; C. L. Sung; T. Y. Huang

doi:10.1016/S0038-1098(02)00807-4

Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu^*
, W. Z. Wong
, S. S. Liu
, Y. C. Wu
, C. L. Sung
, T. Y. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Solid State Communications
Volume	125
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1098(02)00807-4
Publication status	Published - 2003 Feb
Externally published	Yes

Keywords

A. Nanostructures
B. Nanofabrications
D. Tunnelling

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/S0038-1098(02)00807-4

Cite this

@article{f56a6de70ffe4c00bd604735b6e79d3f,

title = "Room temperature two-terminal characteristics in silicon nanowires",

abstract = "Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.",

keywords = "A. Nanostructures, B. Nanofabrications, D. Tunnelling",

author = "Hu, \{S. F.\} and Wong, \{W. Z.\} and Liu, \{S. S.\} and Wu, \{Y. C.\} and Sung, \{C. L.\} and Huang, \{T. Y.\}",

note = "Funding Information: This work was performed under the contract numbers NSC90-2721-2317-200 and NSC90-2215-E-317-002 supported by the National Science Council, Republic of China. Technical supports from the members at National Nano Device Laboratories are acknowledged.",

year = "2003",

month = feb,

doi = "10.1016/S0038-1098(02)00807-4",

language = "English",

volume = "125",

pages = "351--354",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Room temperature two-terminal characteristics in silicon nanowires

AU - Hu, S. F.

AU - Wong, W. Z.

AU - Liu, S. S.

AU - Wu, Y. C.

AU - Sung, C. L.

AU - Huang, T. Y.

N1 - Funding Information: This work was performed under the contract numbers NSC90-2721-2317-200 and NSC90-2215-E-317-002 supported by the National Science Council, Republic of China. Technical supports from the members at National Nano Device Laboratories are acknowledged.

PY - 2003/2

Y1 - 2003/2

N2 - Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

AB - Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

KW - A. Nanostructures

KW - B. Nanofabrications

KW - D. Tunnelling

UR - https://www.scopus.com/pages/publications/0037301789

UR - https://www.scopus.com/pages/publications/0037301789#tab=citedBy

U2 - 10.1016/S0038-1098(02)00807-4

DO - 10.1016/S0038-1098(02)00807-4

M3 - Article

AN - SCOPUS:0037301789

SN - 0038-1098

VL - 125

SP - 351

EP - 354

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Room temperature two-terminal characteristics in silicon nanowires

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this