Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu*, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalSolid State Communications
Issue number6
Publication statusPublished - 2003 Feb
Externally publishedYes


  • A. Nanostructures
  • B. Nanofabrications
  • D. Tunnelling

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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