Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu; W. Z. Wong; S. S. Liu; Y. C. Wu; C. L. Sung; T. Y. Huang

doi:10.1016/S0038-1098(02)00807-4

Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu^*, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Solid State Communications
Volume	125
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1098(02)00807-4
Publication status	Published - 2003 Feb
Externally published	Yes

Keywords

A. Nanostructures
B. Nanofabrications
D. Tunnelling

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(02)00807-4

Cite this

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title = "Room temperature two-terminal characteristics in silicon nanowires",

abstract = "Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.",

keywords = "A. Nanostructures, B. Nanofabrications, D. Tunnelling",

author = "Hu, {S. F.} and Wong, {W. Z.} and Liu, {S. S.} and Wu, {Y. C.} and Sung, {C. L.} and Huang, {T. Y.}",

note = "Funding Information: This work was performed under the contract numbers NSC90-2721-2317-200 and NSC90-2215-E-317-002 supported by the National Science Council, Republic of China. Technical supports from the members at National Nano Device Laboratories are acknowledged.",

year = "2003",

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doi = "10.1016/S0038-1098(02)00807-4",

language = "English",

volume = "125",

pages = "351--354",

journal = "Solid State Communications",

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TY - JOUR

T1 - Room temperature two-terminal characteristics in silicon nanowires

AU - Hu, S. F.

AU - Wong, W. Z.

AU - Liu, S. S.

AU - Wu, Y. C.

AU - Sung, C. L.

AU - Huang, T. Y.

N1 - Funding Information: This work was performed under the contract numbers NSC90-2721-2317-200 and NSC90-2215-E-317-002 supported by the National Science Council, Republic of China. Technical supports from the members at National Nano Device Laboratories are acknowledged.

PY - 2003/2

Y1 - 2003/2

N2 - Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

AB - Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

KW - A. Nanostructures

KW - B. Nanofabrications

KW - D. Tunnelling

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U2 - 10.1016/S0038-1098(02)00807-4

DO - 10.1016/S0038-1098(02)00807-4

M3 - Article

AN - SCOPUS:0037301789

SN - 0038-1098

VL - 125

SP - 351

EP - 354

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Room temperature two-terminal characteristics in silicon nanowires

Abstract

Keywords

ASJC Scopus subject areas

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