Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalSolid State Communications
Volume125
Issue number6
DOIs
Publication statusPublished - 2003 Feb 1

Keywords

  • A. Nanostructures
  • B. Nanofabrications
  • D. Tunnelling

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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