Room temperature two-terminal characteristics in silicon nanowires

S. F. Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, T. Y. Huang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalSolid State Communications
Volume125
Issue number6
DOIs
Publication statusPublished - 2003 Feb 1

Fingerprint

Silicon
Nanowires
nanowires
silicon
room temperature
Coulomb blockade
Current voltage characteristics
Transport properties
Temperature
Lithography
lithography
transport properties
insulators
wire
Wire
occurrences
Oxidation
oxidation
electric potential

Keywords

  • A. Nanostructures
  • B. Nanofabrications
  • D. Tunnelling

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Room temperature two-terminal characteristics in silicon nanowires. / Hu, S. F.; Wong, W. Z.; Liu, S. S.; Wu, Y. C.; Sung, C. L.; Huang, T. Y.

In: Solid State Communications, Vol. 125, No. 6, 01.02.2003, p. 351-354.

Research output: Contribution to journalArticle

Hu, S. F. ; Wong, W. Z. ; Liu, S. S. ; Wu, Y. C. ; Sung, C. L. ; Huang, T. Y. / Room temperature two-terminal characteristics in silicon nanowires. In: Solid State Communications. 2003 ; Vol. 125, No. 6. pp. 351-354.
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