Room-temperature two-terminal characteristics in silicon nano wires

S. F. Hu*, W. Z. Wong, S. S. Liu, Y. G. Wu, C. L. Sung, T. Y. Huang, S. M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.

Original languageEnglish
Title of host publicationProceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)0780375386
Publication statusPublished - 2002
Externally publishedYes
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: 2002 Aug 262002 Aug 28

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Other2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
Country/TerritoryUnited States


  • Carrier confinement
  • Electric variables measurement
  • Electrons
  • Laboratories
  • Oxidation
  • Quantization
  • Silicon
  • Temperature
  • Wires
  • Writing

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics


Dive into the research topics of 'Room-temperature two-terminal characteristics in silicon nano wires'. Together they form a unique fingerprint.

Cite this