Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

L. M. Wang*, Chen Chung Liu, H. C. Yang, H. E. Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

Original languageEnglish
Pages (from-to)4928-4933
Number of pages6
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2004 May 1

ASJC Scopus subject areas

  • General Physics and Astronomy


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