Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

L. M. Wang; Chen Chung Liu; H. C. Yang; H. E. Horng

doi:10.1063/1.1687994

Room-temperature tunneling magnetoresistance in La_0.7Sr _0.3MnO₃ step-edge junctions

L. M. Wang^*, Chen Chung Liu, H. C. Yang, H. E. Horng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

La_0.7Sr_0.3MnO₃ (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO₃ substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

Original language	English
Pages (from-to)	4928-4933
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.1687994
Publication status	Published - 2004 May 1

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.",

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AU - Wang, L. M.

AU - Liu, Chen Chung

AU - Yang, H. C.

AU - Horng, H. E.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

AB - La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

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Room-temperature tunneling magnetoresistance in La_0.7Sr _0.3MnO₃ step-edge junctions

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