Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

L. M. Wang, Chen Chung Liu, Hong-Chang Yang, Herng-Er Horng

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

La0.7Sr0.3MnO3 (LSMO) step-edge junctions were fabricated on step-edge (001) SrTiO3 substrates. Above room temperature (RT) the step-edge junctions showed vanishing tunneling magnetoresistance (TMR) spikes in R(H) curves. To study the conduction mechanism of polarized electrons accross grain boundaries the MR ratio and the dynamic conduction at various temperatures was measured. The results show that tunneling is the dominating mechanism and the charge carriers at the surface boundary govern the tunneling conductivity.

Original languageEnglish
Pages (from-to)4928-4933
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
Publication statusPublished - 2004 May 1

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room temperature
conduction
spikes
charge carriers
grain boundaries
conductivity
curves
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions. / Wang, L. M.; Liu, Chen Chung; Yang, Hong-Chang; Horng, Herng-Er.

In: Journal of Applied Physics, Vol. 95, No. 9, 01.05.2004, p. 4928-4933.

Research output: Contribution to journalArticle

Wang, L. M. ; Liu, Chen Chung ; Yang, Hong-Chang ; Horng, Herng-Er. / Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 9. pp. 4928-4933.
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