Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; D. R. Huang

doi:10.1109/TMAG.2005.855293

Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang^*, C. K. Lo, Y. D. Yao, L. C. Hsieh, D. R. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at V_E = 1.25 ± 0.25 V with the transfer ratio (I_C / I_E) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

Original language	English
Pages (from-to)	2682-2684
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.855293
Publication status	Published - 2005 Oct
Externally published	Yes

Keywords

Magnetic tunneling
P-n junction
Stability
Transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2005.855293

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title = "Room-temperature stability study in silicon base magnetic tunneling transistor",

abstract = "A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.",

keywords = "Magnetic tunneling, P-n junction, Stability, Transistor",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Hsieh, {L. C.} and Huang, {D. R.}",

note = "Funding Information: This work was supported in part by the Academia Sinica Grant MOEA A331XS3710 and NSC 94-2120-M-001-004. The authors would like to acknowledge the technical support from the Nano Technology Research Center, ITRI.",

year = "2005",

month = oct,

doi = "10.1109/TMAG.2005.855293",

language = "English",

volume = "41",

pages = "2682--2684",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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T1 - Room-temperature stability study in silicon base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Huang, D. R.

N1 - Funding Information: This work was supported in part by the Academia Sinica Grant MOEA A331XS3710 and NSC 94-2120-M-001-004. The authors would like to acknowledge the technical support from the Nano Technology Research Center, ITRI.

PY - 2005/10

Y1 - 2005/10

N2 - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

AB - A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

KW - Magnetic tunneling

KW - P-n junction

KW - Stability

KW - Transistor

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

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Room-temperature stability study in silicon base magnetic tunneling transistor

Abstract

Keywords

ASJC Scopus subject areas

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