Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang*, C. K. Lo, Y. D. Yao, L. C. Hsieh, D. R. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

Original languageEnglish
Pages (from-to)2682-2684
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number10
Publication statusPublished - 2005 Oct
Externally publishedYes


  • Magnetic tunneling
  • P-n junction
  • Stability
  • Transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Room-temperature stability study in silicon base magnetic tunneling transistor'. Together they form a unique fingerprint.

Cite this