Room-temperature stability study in silicon base magnetic tunneling transistor

Y. W. Huang, Chi-Kuen Lo, Y. D. Yao, L. C. Hsieh, D. R. Huang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A spin tunneling transistor (STT) was designed by growing a magnetic tunneling junction (MTJ) on a p-n junction. The magnetocurrent (MC) ratio of the collector can be stabilized roughly above 40% at VE = 1.25 ± 0.25 V with the transfer ratio (IC / IE) of 2.88%, while the transistor is operated in the common collector circuitry with an emitter bias and a base resistor at room temperature. The output current can be more than 4 μA when the magnetic moment of the base layer is oriented parallel to that of the emitter layer. The high performance is achieved mainly due to the base resistor, which can push our STT to the right working region and enlarge the MC ratio of the collector.

Original languageEnglish
Pages (from-to)2682-2684
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

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Silicon
Transistors
Resistors
Magnetic moments
Temperature

Keywords

  • Magnetic tunneling
  • P-n junction
  • Stability
  • Transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Room-temperature stability study in silicon base magnetic tunneling transistor. / Huang, Y. W.; Lo, Chi-Kuen; Yao, Y. D.; Hsieh, L. C.; Huang, D. R.

In: IEEE Transactions on Magnetics, Vol. 41, No. 10, 01.10.2005, p. 2682-2684.

Research output: Contribution to journalArticle

Huang, Y. W. ; Lo, Chi-Kuen ; Yao, Y. D. ; Hsieh, L. C. ; Huang, D. R. / Room-temperature stability study in silicon base magnetic tunneling transistor. In: IEEE Transactions on Magnetics. 2005 ; Vol. 41, No. 10. pp. 2682-2684.
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