Room-temperature flexible thin film transistor with high mobility

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO 2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.

Original languageEnglish
Pages (from-to)1459-1462
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number7
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Thin film transistors
Threshold voltage
Leakage currents
Capacitance
transistors
Modulation
Degradation
room temperature
Substrates
thin films
high gain
threshold voltage
Temperature
low voltage
leakage
capacitance
traps
degradation
modulation
thresholds

Keywords

  • InGaZnO (igzo)
  • Thin film transistor (tft)

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Room-temperature flexible thin film transistor with high mobility. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu.

In: Current Applied Physics, Vol. 13, No. 7, 01.01.2013, p. 1459-1462.

Research output: Contribution to journalArticle

Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Cheng, Chun-Hu. / Room-temperature flexible thin film transistor with high mobility. In: Current Applied Physics. 2013 ; Vol. 13, No. 7. pp. 1459-1462.
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