Abstract
Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 1473-1476 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 116 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 Sept |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science