Abstract
Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
Original language | English |
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Pages (from-to) | 1473-1476 |
Number of pages | 4 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 116 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 Sept |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science