Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2014 Sep|
ASJC Scopus subject areas
- Materials Science(all)