Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition

Shiu Jen Liu, Shih Hao Su, Jenh Yih Juang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated.

Original languageEnglish
Pages (from-to)1473-1476
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number3
DOIs
Publication statusPublished - 2014 Sep

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition'. Together they form a unique fingerprint.

  • Cite this