Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu, Min Hung Lee, Shu Tong Chang, Miin Jang Chen, Ching Fuh Lin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

Original languageEnglish
Pages (from-to)L1016-L1018
JournalJapanese Journal of Applied Physics
Issue number10 B
Publication statusPublished - 2000 Oct 15
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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