Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu; Min Hung Lee; Shu Tong Chang; Miin Jang Chen; Ching Fuh Lin

doi:10.1143/jjap.39.l1016

Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu, Min Hung Lee, Shu Tong Chang, Miin Jang Chen, Ching Fuh Lin

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 10⁴ C/cm² stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

Original language	English
Pages (from-to)	L1016-L1018
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	10 B
DOIs	https://doi.org/10.1143/jjap.39.l1016
Publication status	Published - 2000 Oct 15
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.39.l1016

Cite this

@article{3032604421c04098a1776f59d906aecc,

title = "Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates",

abstract = "We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.",

author = "Liu, {Chee Wee} and Lee, {Min Hung} and Chang, {Shu Tong} and Chen, {Miin Jang} and Lin, {Ching Fuh}",

year = "2000",

month = oct,

day = "15",

doi = "10.1143/jjap.39.l1016",

language = "English",

volume = "39",

pages = "L1016--L1018",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 B",

}

TY - JOUR

T1 - Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

AU - Liu, Chee Wee

AU - Lee, Min Hung

AU - Chang, Shu Tong

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

PY - 2000/10/15

Y1 - 2000/10/15

N2 - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

AB - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

UR - http://www.scopus.com/inward/record.url?scp=0034292051&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034292051&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.l1016

DO - 10.1143/jjap.39.l1016

M3 - Article

AN - SCOPUS:0034292051

SN - 0021-4922

VL - 39

SP - L1016-L1018

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 B

ER -

Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this