Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu, Min Hung Lee, Shu Tong Chang, Miin Jang Chen, Ching Fuh Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume39
Issue number10 B
Publication statusPublished - 2000 Oct 15
Externally publishedYes

Fingerprint

Silicon oxides
Electroluminescence
electroluminescence
metal oxides
Diodes
diodes
silicon
room temperature
Substrates
Metals
Temperature
Phonons
line shape
Photoluminescence
phonons
roughness
Surface roughness
photoluminescence
Plasmas
Electrons

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates. / Liu, Chee Wee; Lee, Min Hung; Chang, Shu Tong; Chen, Miin Jang; Lin, Ching Fuh.

In: Japanese Journal of Applied Physics, Vol. 39, No. 10 B, 15.10.2000.

Research output: Contribution to journalArticle

Liu, Chee Wee ; Lee, Min Hung ; Chang, Shu Tong ; Chen, Miin Jang ; Lin, Ching Fuh. / Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates. In: Japanese Journal of Applied Physics. 2000 ; Vol. 39, No. 10 B.
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