Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu; M. H. Lee; Miin Jang Chen; I. C. Lin; Ching Fuh Lin

doi:10.1063/1.126081

Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu^*
, M. H. Lee
, Miin Jang Chen
, I. C. Lin
, Ching Fuh Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

Original language	English
Pages (from-to)	1516-1518
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	12
DOIs	https://doi.org/10.1063/1.126081
Publication status	Published - 2000 Mar 20
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.",

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AU - Lee, M. H.

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AU - Lin, Ching Fuh

PY - 2000/3/20

Y1 - 2000/3/20

N2 - An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

AB - An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

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JO - Applied Physics Letters

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Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

Abstract

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