Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu, M. H. Lee, Miin Jang Chen, I. C. Lin, Ching Fuh Lin

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An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

Original languageEnglish
Pages (from-to)1516-1518
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2000 Mar 20


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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