Room temperature electrical spin injection in remanence

  • S. Hövel*
  • , N. C. Gerhardt
  • , M. R. Hofmann
  • , F. Y. Lo
  • , A. Ludwig
  • , D. Reuter
  • , A. D. Wieck
  • , E. Schuster
  • , H. Wende
  • , W. Keune
  • , O. Petracic
  • , K. Westerholt
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Citations (Scopus)

Abstract

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

Original languageEnglish
Article number021117
JournalApplied Physics Letters
Volume93
Issue number2
DOIs
Publication statusPublished - 2008 Jul 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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