Abstract
We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.
| Original language | English |
|---|---|
| Article number | 021117 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2008 Jul 14 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)