Room temperature electrical spin injection in remanence

S. Hövel*, N. C. Gerhardt, M. R. Hofmann, F. Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

Original languageEnglish
Article number021117
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2008 Jul 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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