Room temperature electrical spin injection in remanence

S. Hövel; N. C. Gerhardt; M. R. Hofmann; F. Y. Lo; A. Ludwig; D. Reuter; A. D. Wieck; E. Schuster; H. Wende; W. Keune; O. Petracic; K. Westerholt

doi:10.1063/1.2957469

Room temperature electrical spin injection in remanence

S. Hövel^*, N. C. Gerhardt, M. R. Hofmann, F. Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

Original language	English
Article number	021117
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2957469
Publication status	Published - 2008 Jul 14
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Room temperature electrical spin injection in remanence",

abstract = "We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.",

author = "S. H{\"o}vel and Gerhardt, {N. C.} and Hofmann, {M. R.} and Lo, {F. Y.} and A. Ludwig and D. Reuter and Wieck, {A. D.} and E. Schuster and H. Wende and W. Keune and O. Petracic and K. Westerholt",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft within the Sonderforschungsbereich 491.",

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doi = "10.1063/1.2957469",

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T1 - Room temperature electrical spin injection in remanence

AU - Hövel, S.

AU - Gerhardt, N. C.

AU - Hofmann, M. R.

AU - Lo, F. Y.

AU - Ludwig, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Schuster, E.

AU - Wende, H.

AU - Keune, W.

AU - Petracic, O.

AU - Westerholt, K.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft within the Sonderforschungsbereich 491.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

AB - We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

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ER -

Room temperature electrical spin injection in remanence

Abstract

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