Room temperature electrical spin injection in remanence

S. Hövel, N. C. Gerhardt, M. R. Hofmann, Fang-Yuh Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

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Abstract

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

Original languageEnglish
Article number021117
JournalApplied Physics Letters
Volume93
Issue number2
DOIs
Publication statusPublished - 2008 Jul 14

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., & Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters, 93(2), [021117]. https://doi.org/10.1063/1.2957469