RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V. A. Markov; H. H. Cheng; Chih ta Chia; A. I. Nikiforov; V. A. Cherepanov; O. P. Pchelyakov; K. S. Zhuravlev; A. B. Talochkin; E. McGlynn; M. O. Henry

doi:10.1016/S0040-6090(00)00839-7

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V. A. Markov^*, H. H. Cheng, Chih ta Chia, A. I. Nikiforov, V. A. Cherepanov, O. P. Pchelyakov, K. S. Zhuravlev, A. B. Talochkin, E. McGlynn, M. O. Henry

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

33 Citations (Scopus)

Abstract

The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

Original language	English
Pages (from-to)	79-83
Number of pages	5
Journal	Thin Solid Films
Volume	369
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00839-7
Publication status	Published - 2000 Jul 3
Event	The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sept 12 → 1999 Sept 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00839-7

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title = "RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots",

abstract = "The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.",

author = "Markov, {V. A.} and Cheng, {H. H.} and Chia, {Chih ta} and Nikiforov, {A. I.} and Cherepanov, {V. A.} and Pchelyakov, {O. P.} and Zhuravlev, {K. S.} and Talochkin, {A. B.} and E. McGlynn and Henry, {M. O.}",

year = "2000",

month = jul,

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doi = "10.1016/S0040-6090(00)00839-7",

language = "English",

volume = "369",

pages = "79--83",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

note = "The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) ; Conference date: 12-09-1999 Through 17-09-1999",

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TY - JOUR

T1 - RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

AU - Markov, V. A.

AU - Cheng, H. H.

AU - Chia, Chih ta

AU - Nikiforov, A. I.

AU - Cherepanov, V. A.

AU - Pchelyakov, O. P.

AU - Zhuravlev, K. S.

AU - Talochkin, A. B.

AU - McGlynn, E.

AU - Henry, M. O.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

AB - The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

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DO - 10.1016/S0040-6090(00)00839-7

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AN - SCOPUS:0034226926

SN - 0040-6090

VL - 369

SP - 79

EP - 83

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)

Y2 - 12 September 1999 through 17 September 1999

ER -

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

Abstract

ASJC Scopus subject areas

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