RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V. A. Markov*, H. H. Cheng, Chih ta Chia, A. I. Nikiforov, V. A. Cherepanov, O. P. Pchelyakov, K. S. Zhuravlev, A. B. Talochkin, E. McGlynn, M. O. Henry

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

33 Citations (Scopus)

Abstract

The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sept 121999 Sept 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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