RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V. A. Markov, H. H. Cheng, Chih ta Chia, A. I. Nikiforov, V. A. Cherepanov, O. P. Pchelyakov, K. S. Zhuravlev, A. B. Talochkin, E. McGlynn, M. O. Henry

Research output: Contribution to journalConference article

33 Citations (Scopus)

Abstract

The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Markov, V. A., Cheng, H. H., Chia, C. T., Nikiforov, A. I., Cherepanov, V. A., Pchelyakov, O. P., Zhuravlev, K. S., Talochkin, A. B., McGlynn, E., & Henry, M. O. (2000). RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots. Thin Solid Films, 369(1), 79-83. https://doi.org/10.1016/S0040-6090(00)00839-7