Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Hung Cheng Lin; Hsiao Wen Zan; Yu Chiang Chao; Ming Yu Chang; Hsin Fei Meng

doi:10.1088/0268-1242/30/5/054003

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Hung Cheng Lin
, Hsiao Wen Zan
, Yu Chiang Chao
, Ming Yu Chang
, Hsin Fei Meng

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

Original language	English
Article number	054003
Pages (from-to)	1-14
Number of pages	14
Journal	Semiconductor Science and Technology
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/30/5/054003
Publication status	Published - 2015 May 1
Externally published	Yes

Keywords

Organic transistor
Solution process
Space-charge-limited transistor
Vertical channel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/30/5/054003

Cite this

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title = "Review of a solution-processed vertical organic transistor as a solid-state vacuum tube",

abstract = "In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.",

keywords = "Organic transistor, Solution process, Space-charge-limited transistor, Vertical channel",

author = "Lin, \{Hung Cheng\} and Zan, \{Hsiao Wen\} and Chao, \{Yu Chiang\} and Chang, \{Ming Yu\} and Meng, \{Hsin Fei\}",

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AU - Lin, Hung Cheng

AU - Zan, Hsiao Wen

AU - Chao, Yu Chiang

AU - Chang, Ming Yu

AU - Meng, Hsin Fei

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

AB - In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

KW - Organic transistor

KW - Solution process

KW - Space-charge-limited transistor

KW - Vertical channel

UR - https://www.scopus.com/pages/publications/84928712057

UR - https://www.scopus.com/pages/publications/84928712057#tab=citedBy

U2 - 10.1088/0268-1242/30/5/054003

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VL - 30

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EP - 14

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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M1 - 054003

ER -

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Abstract

Keywords

ASJC Scopus subject areas

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