Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Hung Cheng Lin; Hsiao Wen Zan; Yu Chiang Chao; Ming Yu Chang; Hsin Fei Meng

doi:10.1088/0268-1242/30/5/054003

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Hung Cheng Lin, Hsiao Wen Zan, Yu Chiang Chao, Ming Yu Chang, Hsin Fei Meng

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

Original language	English
Article number	054003
Pages (from-to)	1-14
Number of pages	14
Journal	Semiconductor Science and Technology
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/30/5/054003
Publication status	Published - 2015 May 1
Externally published	Yes

Keywords

Organic transistor
Solution process
Space-charge-limited transistor
Vertical channel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/30/5/054003

Cite this

@article{ebe46c5ca3b64237859b4ef3d209a5e3,

title = "Review of a solution-processed vertical organic transistor as a solid-state vacuum tube",

abstract = "In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.",

keywords = "Organic transistor, Solution process, Space-charge-limited transistor, Vertical channel",

author = "Lin, {Hung Cheng} and Zan, {Hsiao Wen} and Chao, {Yu Chiang} and Chang, {Ming Yu} and Meng, {Hsin Fei}",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

year = "2015",

month = may,

day = "1",

doi = "10.1088/0268-1242/30/5/054003",

language = "English",

volume = "30",

pages = "1--14",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

AU - Lin, Hung Cheng

AU - Zan, Hsiao Wen

AU - Chao, Yu Chiang

AU - Chang, Ming Yu

AU - Meng, Hsin Fei

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

AB - In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

KW - Organic transistor

KW - Solution process

KW - Space-charge-limited transistor

KW - Vertical channel

UR - http://www.scopus.com/inward/record.url?scp=84928712057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928712057&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/5/054003

DO - 10.1088/0268-1242/30/5/054003

M3 - Article

AN - SCOPUS:84928712057

SN - 0268-1242

VL - 30

SP - 1

EP - 14

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 054003

ER -

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

Abstract

Keywords

ASJC Scopus subject areas

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