Revealing of intrinsic intralayer phonon coupling by polarization-resolved analysis in monolayer MoS2

Teng De Huang, Kristan Bryan Simbulan, Yann Wen Lan, Ting Hua Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The effects of the peculiar in-plane lattice vibrations in monolayer molybdenum disulfide (MoS2) are oftentimes ignored in the analysis of the material's lattice behaviors due to the lack of variation of polarization for the excitation light. In this work, we have observed variations in the relative intensity of the two most dominant Raman peaks of MoS2 via polarized micro-Raman spectroscopy using elliptically polarized incident light. The asymmetry of the incident excitation light gives an additional degree of freedom affecting the relationship between the x- (E12gx) and y- (E12gy) components of the material's in-plane lattice vibrations. Different ratio of the magnitudes for E12gx and E12gy in the lattice vibrations can be induced by changing the polarization state of the incident light. This work investigates the material's unexplored fundamental phonon property which may enlighten past and future studies involving phonon behaviors.

Original languageEnglish
Title of host publicationLow-Dimensional Materials and Devices 2019
EditorsNobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov
ISBN (Electronic)9781510628632
Publication statusPublished - 2019
EventLow-Dimensional Materials and Devices 2019 - San Diego, United States
Duration: 2019 Aug 112019 Aug 13

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceLow-Dimensional Materials and Devices 2019
Country/TerritoryUnited States
CitySan Diego


  • Light-matter interaction
  • Phonon
  • Polarization
  • Raman spectroscopy
  • Transition metal dichalcogenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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