Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2

Linh Nam Nguyen, Yann Wen Lan, Jyun Hong Chen, Tay Rong Chang, Yuan Liang Zhong, Horng Tay Jeng, Lain Jong Li, Chii Dong Chen

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect- transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Original languageEnglish
Pages (from-to)2381-2386
Number of pages6
JournalNano Letters
Volume14
Issue number5
DOIs
Publication statusPublished - 2014 May 14
Externally publishedYes

Keywords

  • discrete energy levels
  • interlayer electron transport
  • Metal transition dichalcogenide
  • nanopore structure
  • resonant tunneling

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Nguyen, L. N., Lan, Y. W., Chen, J. H., Chang, T. R., Zhong, Y. L., Jeng, H. T., Li, L. J., & Chen, C. D. (2014). Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2. Nano Letters, 14(5), 2381-2386. https://doi.org/10.1021/nl404790n