Resistor-triggered SCR device for ESD protection in high-speed I/O interface circuits

Chun Yu Lin*, Chun Yu Chen, M. Tabib-Azar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


In this letter, an on-chip electrostatic discharge (ESD) protection device was proposed for highspeed I/O interface circuits. A resistor-triggered siliconcontrolled rectifier device with improved performance was designed and investigated in a nanoscale CMOS process. As verified in a 0.18-μm CMOS process, the proposed design exhibits a lower clamping voltage and low enough overshoot voltage during ESD stress conditions, and lower parasitic capacitance and low enough leakage current during normal circuit operating conditions. Therefore, the proposed design is suitable for ESD protection of high-speed circuits in low-voltage CMOS processes.

Original languageEnglish
Article number7907283
Pages (from-to)712-715
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2017 Jun


  • Electrostatic discharge (ESD)
  • high-speed
  • silicon-controlled rectifier (SCR).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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