Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

C. Hassel; M. Brands; F. Y. Lo; A. D. Wieck; G. Dumpich

doi:10.1103/PhysRevLett.97.226805

Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

C. Hassel^*, M. Brands, F. Y. Lo, A. D. Wieck, G. Dumpich

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Single (Co/Pt)7 multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180° domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of ΔR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang.

Original language	English
Article number	226805
Journal	Physical Review Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.97.226805
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.97.226805

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abstract = "Single (Co/Pt)7 multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180° domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of ΔR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang.",

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AU - Hassel, C.

AU - Brands, M.

AU - Lo, F. Y.

AU - Wieck, A. D.

AU - Dumpich, G.

PY - 2006

Y1 - 2006

N2 - Single (Co/Pt)7 multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180° domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of ΔR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang.

AB - Single (Co/Pt)7 multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180° domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of ΔR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang.

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Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

Abstract

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