Skip to main navigation
Skip to search
Skip to main content
National Taiwan Normal University Home
Help & FAQ
English
中文
Home
Profiles
Research units
Research output
Projects
Press/Media
Datasets
Activities
Prizes
Student theses
Search by expertise, name or affiliation
Residual strain analysis of In
x
Ga
1-
x
As/GaAs heteroepitaxial layers
V. Krishnamoorthy
*
, Y. W. Lin
, L. Calhoun
,
H. L. Liu
, R. M. Park
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
44
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Residual strain analysis of In
x
Ga
1-
x
As/GaAs heteroepitaxial layers'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
INIS
gallium arsenides
100%
layers
100%
relaxation
50%
resolution
25%
strains
100%
thickness
50%
x-ray diffraction
25%
Material Science
Diffraction Measurement
16%
Epilayers
100%
Gallium Arsenide
100%