Residual strain analysis of InxGa1- xAs/GaAs heteroepitaxial layers

V. Krishnamoorthy; Y. W. Lin; L. Calhoun; H. L. Liu; R. M. Park

doi:10.1063/1.108107

Residual strain analysis of In_xGa_1- _xAs/GaAs heteroepitaxial layers

V. Krishnamoorthy^*, Y. W. Lin, L. Calhoun, H. L. Liu, R. M. Park

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

In_xGa_1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in In_xGa_1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in In_xGa _1-xAs/GaAs epilayers which includes the influence of epilayer composition.

Original language	English
Pages (from-to)	2680-2682
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	22
DOIs	https://doi.org/10.1063/1.108107
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa 1-xAs/GaAs epilayers which includes the influence of epilayer composition.",

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AU - Krishnamoorthy, V.

AU - Lin, Y. W.

AU - Calhoun, L.

AU - Liu, H. L.

AU - Park, R. M.

PY - 1992

Y1 - 1992

N2 - InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa 1-xAs/GaAs epilayers which includes the influence of epilayer composition.

AB - InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa 1-xAs/GaAs epilayers which includes the influence of epilayer composition.

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Residual strain analysis of In_xGa_1- _xAs/GaAs heteroepitaxial layers

Abstract

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