Residual strain analysis of InxGa1- xAs/GaAs heteroepitaxial layers

V. Krishnamoorthy, Y. W. Lin, L. Calhoun, Hsiang Lin Liu, R. M. Park

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Abstract

InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa 1-xAs/GaAs epilayers which includes the influence of epilayer composition.

Original languageEnglish
Pages (from-to)2680-2682
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number22
DOIs
Publication statusPublished - 1992 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Krishnamoorthy, V., Lin, Y. W., Calhoun, L., Liu, H. L., & Park, R. M. (1992). Residual strain analysis of InxGa1- xAs/GaAs heteroepitaxial layers. Applied Physics Letters, 61(22), 2680-2682. https://doi.org/10.1063/1.108107