Remote inductive effects in the Si 2p spectra of halogenated silicon

W. C. Simpson, J. A. Yarmoff, W. H. Hung, F. R. McFeely

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Abstract

Si 2p spectra collected from fluorinated Si(111)-7 × 7 are analyzed to determine whether chemical shifts induced by remote F atoms are discernible. Although the traditional interpretation adequately accounts for the observed chemical shifts without considering remotely induced shifts, recent experimental evidence indicates that such shifts may occur for highly electronegative adsorbates. Thus, an extended scheme is outlined that is consistent with all known data, but which includes remotely induced shifts. It is found that, although they differ quantitatively, both approaches yield the same qualitative results for fluorinated Si.

Original languageEnglish
Pages (from-to)L283-L288
JournalSurface Science
Volume355
Issue number1-3
DOIs
Publication statusPublished - 1996 Jun 1

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Keywords

  • Halogens
  • Low index single crystal surfaces
  • Photoelectron emission
  • Silicon
  • Soft X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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