Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien; Ming Zhang; Shao Chia Huang; Min Hung Lee; Hung Ru Hsu; Yen Teng Ho; Yung Ching Chu; Chao An Jong; Jason Woo

doi:10.1109/SNW.2016.7577984

Reliable doping technique for WSe₂ by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The electrical and material properties of WSe₂ doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×10¹³cm^-2) and good effective hole mobility (16.5cm²/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

Original language	English
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	58-59
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7577984
Publication status	Published - 2016 Sept 27
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 2016 Jun 12 → 2016 Jun 13

Publication series

Name	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/Territory	United States
City	Honolulu
Period	2016/06/12 → 2016/06/13

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SNW.2016.7577984

Cite this

Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A., & Woo, J. (2016). Reliable doping technique for WSe₂ by W:Ta co-sputtering process. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 58-59). Article 7577984 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577984

Reliable doping technique for WSe₂ by W:Ta co-sputtering process. / Chien, Po Yen; Zhang, Ming; Huang, Shao Chia et al.
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 58-59 7577984 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chien, PY, Zhang, M, Huang, SC, Lee, MH, Hsu, HR, Ho, YT, Chu, YC, Jong, CA & Woo, J 2016, Reliable doping technique for WSe₂ by W:Ta co-sputtering process. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7577984, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., pp. 58-59, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 2016/06/12. https://doi.org/10.1109/SNW.2016.7577984

@inproceedings{16bf9e3d4e6947368d6e40c87354d730,

title = "Reliable doping technique for WSe2 by W:Ta co-sputtering process",

abstract = "The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.",

author = "Chien, {Po Yen} and Ming Zhang and Huang, {Shao Chia} and Lee, {Min Hung} and Hsu, {Hung Ru} and Ho, {Yen Teng} and Chu, {Yung Ching} and Jong, {Chao An} and Jason Woo",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/SNW.2016.7577984",

language = "English",

series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "58--59",

booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

}

TY - GEN

T1 - Reliable doping technique for WSe2 by W:Ta co-sputtering process

AU - Chien, Po Yen

AU - Zhang, Ming

AU - Huang, Shao Chia

AU - Lee, Min Hung

AU - Hsu, Hung Ru

AU - Ho, Yen Teng

AU - Chu, Yung Ching

AU - Jong, Chao An

AU - Woo, Jason

PY - 2016/9/27

Y1 - 2016/9/27

N2 - The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

AB - The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

UR - http://www.scopus.com/inward/record.url?scp=84994756589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994756589&partnerID=8YFLogxK

U2 - 10.1109/SNW.2016.7577984

DO - 10.1109/SNW.2016.7577984

M3 - Conference contribution

AN - SCOPUS:84994756589

T3 - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

SP - 58

EP - 59

BT - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016

Y2 - 12 June 2016 through 13 June 2016

ER -