Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)


    The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

    Original languageEnglish
    Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Number of pages2
    ISBN (Electronic)9781509007264
    Publication statusPublished - 2016 Sep 27
    Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
    Duration: 2016 Jun 122016 Jun 13

    Publication series

    Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016


    Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
    Country/TerritoryUnited States

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials


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