Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages58-59
Number of pages2
ISBN (Electronic)9781509007264
DOIs
Publication statusPublished - 2016 Sep 27
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 2016 Jun 122016 Jun 13

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period16/6/1216/6/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A., & Woo, J. (2016). Reliable doping technique for WSe2 by W:Ta co-sputtering process. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 58-59). [7577984] (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577984