Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

    Original languageEnglish
    Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages58-59
    Number of pages2
    ISBN (Electronic)9781509007264
    DOIs
    Publication statusPublished - 2016 Sep 27
    Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
    Duration: 2016 Jun 122016 Jun 13

    Publication series

    Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

    Conference

    Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
    CountryUnited States
    CityHonolulu
    Period16/6/1216/6/13

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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