Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan; Chuan Hsi Liu

doi:10.1149/1.2051827

Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan^*, Chuan Hsi Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N₂O oxide with rapid thermal NO annealing (N₂O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO ₂/oxynitride-based gate dielectrics. The N₂O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

Original language	English
Pages (from-to)	G851-G855
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	11
DOIs	https://doi.org/10.1149/1.2051827
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2051827

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title = "Reliability scaling limit of 14-{\AA} oxynitride gate dielectrics by different processing treatments",

abstract = "Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.",

author = "Pan, {Tung Ming} and Liu, {Chuan Hsi}",

year = "2005",

doi = "10.1149/1.2051827",

language = "English",

volume = "152",

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journal = "Journal of the Electrochemical Society",

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publisher = "Electrochemical Society, Inc.",

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AU - Pan, Tung Ming

AU - Liu, Chuan Hsi

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AB - Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

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JF - Journal of the Electrochemical Society

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Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Abstract

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