Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan*, Chuan Hsi Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

Original languageEnglish
Pages (from-to)G851-G855
JournalJournal of the Electrochemical Society
Volume152
Issue number11
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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