Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan, Chuan-Hsi Liu

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Abstract

Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume152
Issue number11
DOIs
Publication statusPublished - 2005 Dec 2

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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