TY - GEN
T1 - Reliability of ambipolar switching poly-Si diodes for cross-point memory applications
AU - Lee, M. H.
AU - Kao, C. Y.
AU - Yang, C. L.
AU - Chen, Y. S.
AU - Lee, H. Y.
AU - Chen, F.
AU - Tsai, M. J.
PY - 2011
Y1 - 2011
N2 - Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.
AB - Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.
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U2 - 10.1109/DRC.2011.5994428
DO - 10.1109/DRC.2011.5994428
M3 - Conference contribution
AN - SCOPUS:84880740758
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 89
EP - 90
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
T2 - 69th Device Research Conference, DRC 2011
Y2 - 20 June 2011 through 22 June 2011
ER -