Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

M. H. Lee, C. Y. Kao, C. L. Yang, Y. S. Chen, H. Y. Lee, F. Chen, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.

Original languageEnglish
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages89-90
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: 2011 Jun 202011 Jun 22

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period11/6/2011/6/22

Fingerprint

Polysilicon
Diodes
Data storage equipment
Phase change memory
Flash memory
Leakage currents
Electric power utilization
Controllers
Oxides
Metals
Costs
RRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, M. H., Kao, C. Y., Yang, C. L., Chen, Y. S., Lee, H. Y., Chen, F., & Tsai, M. J. (2011). Reliability of ambipolar switching poly-Si diodes for cross-point memory applications. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 89-90). [5994428] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994428

Reliability of ambipolar switching poly-Si diodes for cross-point memory applications. / Lee, M. H.; Kao, C. Y.; Yang, C. L.; Chen, Y. S.; Lee, H. Y.; Chen, F.; Tsai, M. J.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 89-90 5994428 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, MH, Kao, CY, Yang, CL, Chen, YS, Lee, HY, Chen, F & Tsai, MJ 2011, Reliability of ambipolar switching poly-Si diodes for cross-point memory applications. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994428, Device Research Conference - Conference Digest, DRC, pp. 89-90, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 11/6/20. https://doi.org/10.1109/DRC.2011.5994428
Lee MH, Kao CY, Yang CL, Chen YS, Lee HY, Chen F et al. Reliability of ambipolar switching poly-Si diodes for cross-point memory applications. In 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 89-90. 5994428. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994428
Lee, M. H. ; Kao, C. Y. ; Yang, C. L. ; Chen, Y. S. ; Lee, H. Y. ; Chen, F. ; Tsai, M. J. / Reliability of ambipolar switching poly-Si diodes for cross-point memory applications. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 89-90 (Device Research Conference - Conference Digest, DRC).
@inproceedings{d084bda09946424d9a1cf33484f88250,
title = "Reliability of ambipolar switching poly-Si diodes for cross-point memory applications",
abstract = "Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.",
author = "Lee, {M. H.} and Kao, {C. Y.} and Yang, {C. L.} and Chen, {Y. S.} and Lee, {H. Y.} and F. Chen and Tsai, {M. J.}",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/DRC.2011.5994428",
language = "English",
isbn = "9781612842417",
series = "Device Research Conference - Conference Digest, DRC",
pages = "89--90",
booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

}

TY - GEN

T1 - Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

AU - Lee, M. H.

AU - Kao, C. Y.

AU - Yang, C. L.

AU - Chen, Y. S.

AU - Lee, H. Y.

AU - Chen, F.

AU - Tsai, M. J.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.

AB - Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84880740758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880740758&partnerID=8YFLogxK

U2 - 10.1109/DRC.2011.5994428

DO - 10.1109/DRC.2011.5994428

M3 - Conference contribution

AN - SCOPUS:84880740758

SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

SP - 89

EP - 90

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

ER -