Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

M. H. Lee, C. Y. Kao, C. L. Yang, Y. S. Chen, H. Y. Lee, F. Chen, M. J. Tsai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)

    Abstract

    Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.

    Original languageEnglish
    Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
    Pages89-90
    Number of pages2
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
    Duration: 2011 Jun 202011 Jun 22

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770

    Other

    Other69th Device Research Conference, DRC 2011
    CountryUnited States
    CitySanta Barbara, CA
    Period2011/06/202011/06/22

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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