Reliability improvement of rapid thermal oxide using gas switching

Min Hung Lee, Cheng Ya Yu, Fon Yuan, K. F. Chen, Chang Chi Lai, Chee Wee Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.

Original languageEnglish
Pages (from-to)656-659
Number of pages4
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number4
Publication statusPublished - 2003 Nov
Externally publishedYes


  • Gas switching
  • Rapid thermal oxidation
  • Reliability
  • Spike ramp

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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