Reliability improvement of rapid thermal oxide using gas switching

Min Hung Lee, Cheng Ya Yu, Fon Yuan, K. F. Chen, Chang Chi Lai, Chee Wee Liu

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.

    Original languageEnglish
    Pages (from-to)656-659
    Number of pages4
    JournalIEEE Transactions on Semiconductor Manufacturing
    Volume16
    Issue number4
    DOIs
    Publication statusPublished - 2003 Nov 1

    Fingerprint

    ramps
    Oxides
    Gases
    oxides
    Oxidation
    gases
    cycles
    oxidation
    Switches
    Hot Temperature
    Oxygen
    spikes
    switches
    oxygen

    Keywords

    • Gas switching
    • Rapid thermal oxidation
    • Reliability
    • Spike ramp

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering

    Cite this

    Reliability improvement of rapid thermal oxide using gas switching. / Lee, Min Hung; Yu, Cheng Ya; Yuan, Fon; Chen, K. F.; Lai, Chang Chi; Liu, Chee Wee.

    In: IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No. 4, 01.11.2003, p. 656-659.

    Research output: Contribution to journalArticle

    Lee, Min Hung ; Yu, Cheng Ya ; Yuan, Fon ; Chen, K. F. ; Lai, Chang Chi ; Liu, Chee Wee. / Reliability improvement of rapid thermal oxide using gas switching. In: IEEE Transactions on Semiconductor Manufacturing. 2003 ; Vol. 16, No. 4. pp. 656-659.
    @article{803ae05bd72442aaa11ea2ba3b045973,
    title = "Reliability improvement of rapid thermal oxide using gas switching",
    abstract = "The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.",
    keywords = "Gas switching, Rapid thermal oxidation, Reliability, Spike ramp",
    author = "Lee, {Min Hung} and Yu, {Cheng Ya} and Fon Yuan and Chen, {K. F.} and Lai, {Chang Chi} and Liu, {Chee Wee}",
    year = "2003",
    month = "11",
    day = "1",
    doi = "10.1109/TSM.2003.818982",
    language = "English",
    volume = "16",
    pages = "656--659",
    journal = "IEEE Transactions on Semiconductor Manufacturing",
    issn = "0894-6507",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "4",

    }

    TY - JOUR

    T1 - Reliability improvement of rapid thermal oxide using gas switching

    AU - Lee, Min Hung

    AU - Yu, Cheng Ya

    AU - Yuan, Fon

    AU - Chen, K. F.

    AU - Lai, Chang Chi

    AU - Liu, Chee Wee

    PY - 2003/11/1

    Y1 - 2003/11/1

    N2 - The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.

    AB - The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.

    KW - Gas switching

    KW - Rapid thermal oxidation

    KW - Reliability

    KW - Spike ramp

    UR - http://www.scopus.com/inward/record.url?scp=0344465004&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0344465004&partnerID=8YFLogxK

    U2 - 10.1109/TSM.2003.818982

    DO - 10.1109/TSM.2003.818982

    M3 - Article

    VL - 16

    SP - 656

    EP - 659

    JO - IEEE Transactions on Semiconductor Manufacturing

    JF - IEEE Transactions on Semiconductor Manufacturing

    SN - 0894-6507

    IS - 4

    ER -