Reliability improvement of rapid thermal oxide using gas switching

Min Hung Lee, Cheng Ya Yu, Fon Yuan, K. F. Chen, Chang Chi Lai, Chee Wee Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60°C-90°C/s) of a rapid thermal process, the oxidation during the slow ramp-down cycle may produce the inferior oxide, especially for ultrathin oxide. To avoid the oxidation in the slow ramp-down cycle, the oxidation precursor (oxygen) is switched off during the ramp-down cycle. The reliability of resulting oxide without oxidation during the ramp-down cycle is enhanced as compared with the conventional oxide, which is still oxidized during the ramp-down cycle.

Original languageEnglish
Pages (from-to)656-659
Number of pages4
JournalIEEE Transactions on Semiconductor Manufacturing
Volume16
Issue number4
DOIs
Publication statusPublished - 2003 Nov 1

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Oxides
Gases
oxides
Oxidation
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oxidation
Switches
Hot Temperature
Oxygen
spikes
switches
oxygen

Keywords

  • Gas switching
  • Rapid thermal oxidation
  • Reliability
  • Spike ramp

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Reliability improvement of rapid thermal oxide using gas switching. / Lee, Min Hung; Yu, Cheng Ya; Yuan, Fon; Chen, K. F.; Lai, Chang Chi; Liu, Chee Wee.

In: IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No. 4, 01.11.2003, p. 656-659.

Research output: Contribution to journalArticle

Lee, Min Hung ; Yu, Cheng Ya ; Yuan, Fon ; Chen, K. F. ; Lai, Chang Chi ; Liu, Chee Wee. / Reliability improvement of rapid thermal oxide using gas switching. In: IEEE Transactions on Semiconductor Manufacturing. 2003 ; Vol. 16, No. 4. pp. 656-659.
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