Reliability improvement of a-Si:H thin film transistors on plastic substrate with saturation in deep state after multiple bending cycles

M. H. Lee, P. G. Chen, C. C. Hsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

For flexible electronic applications, the disordered bonds of a-Si:H may generate a redistribution of trapped states with mechanical strain. During mechanical strain, the deep states are redistributed in a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs (thin film transistors) on flexible substrates. We conclude that it is possible to produce low-cost and highly uniform active-matrix organic light emitting diodes systems for use in flexible display applications using a-Si:H TFTs array backplanes.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalThin Solid Films
Volume544
DOIs
Publication statusPublished - 2013 Oct 1

    Fingerprint

Keywords

  • Deep state
  • Flexible
  • Mechanical strain
  • Redistribution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this