Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan Hsi Liu*, Hung Wen Hsu, Hung Wen Chen, Pi Chun Juan, Mu Chun Wang, Chin Po Cheng, Heng Sheng Huang

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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